Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2003 |
Series | HiPerFAST™ |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 300W |
Current Rating | 75A |
Base Part Number | IXG*50N60 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 50ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 75A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 100 ns |
Test Condition | 480V, 50A, 2.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
Turn Off Time-Nom (toff) | 450 ns |
Gate Charge | 160nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 50ns/150ns |
Switching Energy | 3mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |