Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Series | GenX3™ |
Pbfree Code | yes |
Part Status | Active |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 780W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 87ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 280A |
Power Dissipation-Max (Abs) | 780W |
Turn On Time | 123 ns |
Test Condition | 480V, 100A, 2 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 100A |
Turn Off Time-Nom (toff) | 520 ns |
IGBT Type | PT |
Gate Charge | 465nC |
Current - Collector Pulsed (Icm) | 600A |
Td (on/off) @ 25°C | 40ns/227ns |
Switching Energy | 2.9mJ (on), 3.5mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | RoHS Compliant |