Parameters | |
---|---|
Turn Off Time-Nom (toff) | 915 ns |
IGBT Type | PT |
Gate Charge | 88nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 16ns/190ns |
Switching Energy | 3.6mJ (on), 3.9mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Weight | 10.000011g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2010 |
Series | GenX3™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 300W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 300W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.4kV |
Max Collector Current | 60A |
Reverse Recovery Time | 350 ns |
Collector Emitter Breakdown Voltage | 1.4kV |
Voltage - Collector Emitter Breakdown (Max) | 1400V |
Collector Emitter Saturation Voltage | 3V |
Turn On Time | 66 ns |
Test Condition | 960V, 28A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 28A |