Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Weight | 10.000011g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Series | GenX3™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1kW |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*400N30 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1kW |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 45 ns |
Power - Max | 1000W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 210 ns |
Collector Emitter Voltage (VCEO) | 1.15V |
Max Collector Current | 400A |
Collector Emitter Breakdown Voltage | 300V |
Collector Emitter Saturation Voltage | 1.15V |
Turn On Time | 100 ns |
Vce(on) (Max) @ Vge, Ic | 1.15V @ 15V, 100A |
Turn Off Time-Nom (toff) | 555 ns |
IGBT Type | PT |
Gate Charge | 560nC |
Current - Collector Pulsed (Icm) | 1200A |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |