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IXGK64N60B3D1

IGBT 600V 460W TO264


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGK64N60B3D1
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 296
  • Description: IGBT 600V 460W TO264 (Kg)

Details

Tags

Parameters
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 460W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 460W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 400A
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Turn On Time 64 ns
Test Condition 480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Turn Off Time-Nom (toff) 326 ns
IGBT Type PT
Gate Charge 168nC
Td (on/off) @ 25°C 25ns/138ns
Switching Energy 1.5mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series GenX3™
JESD-609 Code e1
See Relate Datesheet

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