IXGK75N250
| Parameters | |
|---|---|
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 780W |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 780W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Max Collector Current | 170A |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Collector Emitter Saturation Voltage | 2.7V |
| Input Capacitance | 9nF |
| Turn On Time | 305 ns |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 420 ns |
| IGBT Type | NPT |
| Gate Charge | 410nC |
| Current - Collector Pulsed (Icm) | 530A |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
See Relate Datesheet
