Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-204AE |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | BOTTOM |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 2 |
JESD-30 Code | O-MBFM-P2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 150W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 200ns |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Current - Collector (Ic) (Max) | 34A |
Power Dissipation-Max (Abs) | 150W |
Turn On Time | 300 ns |
Test Condition | 800V, 17A, 82 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 17A |
Turn Off Time-Nom (toff) | 1450 ns |
Gate Charge | 120nC |
Current - Collector Pulsed (Icm) | 68A |
Td (on/off) @ 25°C | 100ns/500ns |
Switching Energy | 3mJ (off) |
Gate-Emitter Voltage-Max | 20V |
VCEsat-Max | 4 V |
Gate-Emitter Thr Voltage-Max | 5V |
Power Dissipation Ambient-Max | 150W |
RoHS Status | ROHS3 Compliant |