IXGM20N60A
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | HIGH SPEED |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| JESD-30 Code | O-MBFM-P2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Reverse Recovery Time | 200ns |
| Current - Collector (Ic) (Max) | 40A |
| Power Dissipation-Max (Abs) | 150W |
| Turn On Time | 300 ns |
| Test Condition | 480V, 20A, 82 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 1150 ns |
| Gate Charge | 120nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 100ns/600ns |
| Switching Energy | 2mJ (on), 2mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 3 V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Power Dissipation Ambient-Max | 150W |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
