Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-204AE |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | BOTTOM |
Terminal Form | PIN/PEG |
JESD-30 Code | O-MBFM-P2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 200ns |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 200W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 200ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 50A |
Power Dissipation-Max (Abs) | 200W |
Turn On Time | 300 ns |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
Turn Off Time-Nom (toff) | 1100 ns |
Gate Charge | 180nC |
Current - Collector Pulsed (Icm) | 100A |
Td (on/off) @ 25°C | 100ns/500ns |
Gate-Emitter Voltage-Max | 30V |
VCEsat-Max | 2.5 V |
Gate-Emitter Thr Voltage-Max | 5V |
Power Dissipation Ambient-Max | 200W |
Fall Time-Max (tf) | 2000ns |
RoHS Status | ROHS3 Compliant |