IXGN200N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2009 |
| Series | GenX3™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel (Ni) |
| Additional Feature | UL RECOGNIZED, LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 830W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | IXG*200N60 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation | 830W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 44 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Turn-Off Delay Time | 310 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 300A |
| Current - Collector Cutoff (Max) | 50μA |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.35V |
| Input Capacitance | 26nF |
| Turn On Time | 122 ns |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 730 ns |
| IGBT Type | PT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 26nF @ 25V |
| VCEsat-Max | 1.5 V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
