Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 2009 |
Series | GenX3™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Nickel (Ni) |
Additional Feature | UL RECOGNIZED, LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 360W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Base Part Number | IXG*72N60 |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | Single |
Power Dissipation | 360W |
Case Connection | ISOLATED |
Turn On Delay Time | 27 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Turn-Off Delay Time | 77 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 78A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.1V |
Input Capacitance | 4.78nF |
Turn On Time | 62 ns |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) | 244 ns |
IGBT Type | PT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 4.78nF @ 25V |
VCEsat-Max | 2.5 V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |