Parameters | |
---|---|
Base Part Number | IXG*12N60 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 100W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 24A |
Reverse Recovery Time | 35ns |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 40 ns |
Test Condition | 480V, 12A, 18 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
Turn Off Time-Nom (toff) | 170 ns |
Gate Charge | 32nC |
Current - Collector Pulsed (Icm) | 48A |
Td (on/off) @ 25°C | 20ns/60ns |
Switching Energy | 90μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 2.299997g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2002 |
Series | HiPerFAST™, Lightspeed™ |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 100W |