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IXGP15N120C

IGBT 1200V 30A 200W TO220AB


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGP15N120C
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 737
  • Description: IGBT 1200V 30A 200W TO220AB (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series Lightspeed™
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*15N120
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.8V
Max Collector Current 30A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 43 ns
Test Condition 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 15A
Turn Off Time-Nom (toff) 470 ns
Gate Charge 86nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 190ns
RoHS Status RoHS Compliant
See Relate Datesheet

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