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IXGP20N100

IGBT 1000V 40A 150W TO220


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGP20N100
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 845
  • Description: IGBT 1000V 40A 150W TO220 (Kg)

Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*20N100
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage 3V
Turn On Time 60 ns
Test Condition 800V, 20A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 1220 ns
IGBT Type PT
Gate Charge 73nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 30ns/350ns
Switching Energy 3.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 700ns
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
See Relate Datesheet

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