Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2012 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 190W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 190W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.7V |
Max Collector Current | 56A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 52 ns |
Test Condition | 360V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 24A |
Turn Off Time-Nom (toff) | 248 ns |
IGBT Type | PT |
Gate Charge | 64nC |
Current - Collector Pulsed (Icm) | 130A |
Td (on/off) @ 25°C | 21ns/143ns |
Switching Energy | 400μJ (on), 300μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | RoHS Compliant |