Parameters | |
---|---|
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 53 ns |
Test Condition | 400V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 24A |
Turn Off Time-Nom (toff) | 511 ns |
IGBT Type | PT |
Gate Charge | 77nC |
Current - Collector Pulsed (Icm) | 156A |
Td (on/off) @ 25°C | 21ns/200ns |
Switching Energy | 440μJ (on), 700μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | RoHS Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 190W |
Terminal Position | SINGLE |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 190W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.7V |
Max Collector Current | 56A |
Reverse Recovery Time | 30 ns |
JEDEC-95 Code | TO-220AB |