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IXGP30N60C3D4

IGBT 600V 60A 220W TO220AB


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGP30N60C3D4
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 687
  • Description: IGBT 600V 60A 220W TO220AB (Kg)

Details

Tags

Parameters
Collector Emitter Saturation Voltage 2.6V
Turn On Time 45 ns
Test Condition 300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/42ns
Switching Energy 270μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 220W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 220W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Reverse Recovery Time 60 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
See Relate Datesheet

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