Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Weight | 5.500006g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Max Power Dissipation | 400W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*35N120 |
Pin Count | 2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 400W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 75A |
Reverse Recovery Time | 40 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 105 ns |
Test Condition | 960V, 35A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 35A |
Turn Off Time-Nom (toff) | 780 ns |
Gate Charge | 140nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 40ns/270ns |
Switching Energy | 900μJ (on), 3.8mJ (off) |
RoHS Status | ROHS3 Compliant |