IXGR120N60C2
| Parameters | |
|---|---|
| Rise Time | 45ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 75A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Turn On Time | 100 ns |
| Test Condition | 400V, 80A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 257 ns |
| IGBT Type | PT |
| Gate Charge | 370nC |
| Current - Collector Pulsed (Icm) | 500A |
| Td (on/off) @ 25°C | 40ns/120ns |
| Switching Energy | 1.7mJ (on), 1mJ (off) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 247 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | HiPerFAST™, Lightspeed 2™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation | 300W |
| Base Part Number | IXG*120N60 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 300W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
See Relate Datesheet
