Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247™ |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2001 |
Series | HiPerFAST™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*35N120 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 200W |
Case Connection | ISOLATED |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 160ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 70A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.3V |
Turn On Time | 86 ns |
Test Condition | 960V, 35A, 4.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 35A |
Turn Off Time-Nom (toff) | 660 ns |
IGBT Type | PT |
Gate Charge | 170nC |
Current - Collector Pulsed (Icm) | 140A |
Td (on/off) @ 25°C | 50ns/180ns |
Switching Energy | 3.8mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |