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IXGR35N120B

IGBT 1200V 70A 200W ISOPLUS247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGR35N120B
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 432
  • Description: IGBT 1200V 70A 200W ISOPLUS247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HiPerFAST™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*35N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 160ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.3V
Turn On Time 86 ns
Test Condition 960V, 35A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A
Turn Off Time-Nom (toff) 660 ns
IGBT Type PT
Gate Charge 170nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 50ns/180ns
Switching Energy 3.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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