IXGR35N120C
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | HiPerFAST™ |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*35N120 |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 4V |
| Max Collector Current | 70A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 86 ns |
| Test Condition | 960V, 35A, 4.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 480 ns |
| Gate Charge | 170nC |
| Current - Collector Pulsed (Icm) | 140A |
| Td (on/off) @ 25°C | 50ns/150ns |
| Switching Energy | 3mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
