Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247™ |
Number of Pins | 247 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HiPerFAST™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*50N60 |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | ISOLATED |
Input Type | Standard |
Power - Max | 250W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 75A |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 110 ns |
Test Condition | 480V, 50A, 2.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) | 375 ns |
Gate Charge | 110nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 50ns/110ns |
Switching Energy | 3mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | RoHS Compliant |