IXGR6N170A
| Parameters | |
|---|---|
| Max Collector Current | 5.5A |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Turn On Time | 91 ns |
| Test Condition | 850V, 6A, 33 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 7V @ 15V, 3A |
| Turn Off Time-Nom (toff) | 271 ns |
| Gate Charge | 18.5nC |
| Current - Collector Pulsed (Icm) | 18A |
| Td (on/off) @ 25°C | 46ns/220ns |
| Switching Energy | 590μJ (on), 180μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 65ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 247 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 50W |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 50W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7kV |
See Relate Datesheet
