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IXGT16N170AH1

IGBT 1700V 16A 190W TO268


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGT16N170AH1
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 598
  • Description: IGBT 1700V 16A 190W TO268 (Kg)

Details

Tags

Parameters
Fall Time-Max (tf) 150ns
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 190W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*16N170
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 190W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 16A
Reverse Recovery Time 230 ns
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 5V
Turn On Time 97 ns
Test Condition 850V, 16A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 11A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 65nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 36ns/160ns
Switching Energy 900μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
See Relate Datesheet

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