IXGT20N140C3H1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | GenX3™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA FAST |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation | 250W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 5V |
| Max Collector Current | 42A |
| Reverse Recovery Time | 70 ns |
| Collector Emitter Breakdown Voltage | 1.4kV |
| Voltage - Collector Emitter Breakdown (Max) | 1400V |
| Collector Emitter Saturation Voltage | 1.4kV |
| Turn On Time | 35 ns |
| Test Condition | 700V, 20A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 524 ns |
| IGBT Type | PT |
| Gate Charge | 88nC |
| Current - Collector Pulsed (Icm) | 108A |
| Td (on/off) @ 25°C | 19ns/110ns |
| Switching Energy | 1.35mJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
