Parameters | |
---|---|
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 150W |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Reach Compliance Code | unknown |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 150W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 6V |
Max Collector Current | 13A |
Collector Emitter Breakdown Voltage | 2.5kV |
Voltage - Collector Emitter Breakdown (Max) | 2500V |
Test Condition | 1250V, 4A, 20 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 4A |
Turn Off Time-Nom (toff) | 471 ns |
IGBT Type | NPT |
Gate Charge | 57nC |
Current - Collector Pulsed (Icm) | 46A |
Td (on/off) @ 25°C | -/350ns |
Switching Energy | 360μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
JESD-609 Code | e3 |