IXGT60N60
| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA FAST |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 300W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*60N60 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 300W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 75A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Turn On Time | 50 ns |
| Test Condition | 480V, 60A, 2.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 60A |
| Turn Off Time-Nom (toff) | 650 ns |
| IGBT Type | PT |
| Gate Charge | 130nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 50ns/300ns |
| Switching Energy | 8mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 570ns |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Weight | 4.500005g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
See Relate Datesheet
