Parameters | |
---|---|
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
Turn Off Time-Nom (toff) | 550 ns |
IGBT Type | PT |
Gate Charge | 170nC |
Current - Collector Pulsed (Icm) | 300A |
Td (on/off) @ 25°C | 28ns/160ns |
Switching Energy | 1mJ (off) |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Weight | 4.500005g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2003 |
Series | HiPerFAST™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Max Power Dissipation | 500W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*60N60 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 28 ns |
Power - Max | 500W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 160 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 75A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.8V |
Turn On Time | 64 ns |
Test Condition | 400V, 50A, 3.3 Ω, 15V |