IXGV25N250S
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PLUS-220SMD |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Max Power Dissipation | 250W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*25N250 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 250W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 5.2V |
| Max Collector Current | 60A |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Turn On Time | 301 ns |
| Vce(on) (Max) @ Vge, Ic | 5.2V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 409 ns |
| IGBT Type | NPT |
| Gate Charge | 75nC |
| Current - Collector Pulsed (Icm) | 200A |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
