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IXGX120N120A3

IGBT 1200V 240A 830W PLUS247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGX120N120A3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 851
  • Description: IGBT 1200V 240A 830W PLUS247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 830W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 830W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 490 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 240A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.85V
Turn On Time 105 ns
Test Condition 960V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Turn Off Time-Nom (toff) 1365 ns
IGBT Type PT
Gate Charge 420nC
Current - Collector Pulsed (Icm) 600A
Td (on/off) @ 25°C 40ns/490ns
Switching Energy 10mJ (on), 33mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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