Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
Series | GenX3™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 830W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 830W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 40 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 490 ns |
Collector Emitter Voltage (VCEO) | 2.2V |
Max Collector Current | 240A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.85V |
Turn On Time | 105 ns |
Test Condition | 960V, 100A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
Turn Off Time-Nom (toff) | 1365 ns |
IGBT Type | PT |
Gate Charge | 420nC |
Current - Collector Pulsed (Icm) | 600A |
Td (on/off) @ 25°C | 40ns/490ns |
Switching Energy | 10mJ (on), 33mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |