Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Packaging | Tube |
Published | 2012 |
Series | GenX3™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 830W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 830W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 3V |
Max Collector Current | 200A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 122 ns |
Test Condition | 600V, 100A, 2 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
Turn Off Time-Nom (toff) | 885 ns |
IGBT Type | PT |
Gate Charge | 470nC |
Current - Collector Pulsed (Icm) | 370A |
Td (on/off) @ 25°C | 36ns/275ns |
Switching Energy | 5.5mJ (on), 5.8mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |