IXGX32N170H1
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 75A |
| Reverse Recovery Time | 150 ns |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 90 ns |
| Test Condition | 1360V, 32A, 2.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 32A |
| Turn Off Time-Nom (toff) | 920 ns |
| IGBT Type | NPT |
| Gate Charge | 155nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 45ns/270ns |
| Switching Energy | 15mJ (off) |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2003 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation | 350W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*32N170 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 45 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 270 ns |
See Relate Datesheet
