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IXGX55N120A3H1

IXYS IXGX55N120A3H1 IGBT 1200V


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGX55N120A3H1
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 868
  • Description: IXYS IXGX55N120A3H1 IGBT 1200V (Kg)

Details

Tags

Parameters
Gate Charge 185nC
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 23ns/365ns
Switching Energy 5.1mJ (on), 13.3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Published 2012
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 460W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 460W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 125A
Reverse Recovery Time 200 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 70 ns
Test Condition 960V, 55A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 55A
Turn Off Time-Nom (toff) 1253 ns
IGBT Type PT
See Relate Datesheet

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