IXLF19N250A
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | UL RECOGNIZED, HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 2.5kV |
| Max Power Dissipation | 250W |
| Current Rating | 32A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 100 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 50ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 600 ns |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Max Collector Current | 32A |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Collector Emitter Saturation Voltage | 3.2V |
| Turn On Time | 150 ns |
| Test Condition | 1500V, 19A, 47 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 19A |
| Turn Off Time-Nom (toff) | 850 ns |
| IGBT Type | NPT |
| Gate Charge | 142nC |
| Switching Energy | 15mJ (on), 30mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 8V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Number of Pins | 3 |
See Relate Datesheet
