Parameters | |
---|---|
Mount | Surface Mount, Through Hole |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 1.59999g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Voltage - Rated DC | 600V |
Max Power Dissipation | 190W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 35A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXS*20N60 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 190W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 30ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 35A |
Reverse Recovery Time | 30 ns |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Turn On Time | 60 ns |
Test Condition | 480V, 16A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
Turn Off Time-Nom (toff) | 390 ns |
IGBT Type | PT |
Gate Charge | 33nC |
Current - Collector Pulsed (Icm) | 60A |
Td (on/off) @ 25°C | 30ns/116ns |
Switching Energy | 380μJ (off) |
Height | 9.15mm |
Length | 10.66mm |
Width | 4.82mm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |