IXSH10N60B2D1
| Parameters | |
|---|---|
| Pin Count | 3 |
| Width | 5.3mm |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 30ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 20A |
| Reverse Recovery Time | 25 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 60 ns |
| Test Condition | 480V, 10A, 30 Ω, 15V |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| Turn Off Time-Nom (toff) | 530 ns |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| IGBT Type | PT |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Gate Charge | 17nC |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Current - Collector Pulsed (Icm) | 30A |
| Voltage - Rated DC | 600V |
| Td (on/off) @ 25°C | 30ns/180ns |
| Max Power Dissipation | 100W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Switching Energy | 430μJ (off) |
| Current Rating | 20A |
| Height | 21.46mm |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXS*10N60 |
| Length | 16.26mm |
See Relate Datesheet
