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IXSH25N120A

IGBT 1200V 50A 200W TO247AD


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXSH25N120A
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 183
  • Description: IGBT 1200V 50A 200W TO247AD (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 35
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 300 ns
Test Condition 960V, 25A, 18 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 25A
Turn Off Time-Nom (toff) 1350 ns
Gate Charge 120nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 100ns/450ns
Switching Energy 9.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
RoHS Status RoHS Compliant
See Relate Datesheet

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