Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW SATURATION VOLTAGE |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 35 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 200W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 50A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 300 ns |
Test Condition | 960V, 25A, 18 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
Turn Off Time-Nom (toff) | 1350 ns |
Gate Charge | 120nC |
Current - Collector Pulsed (Icm) | 80A |
Td (on/off) @ 25°C | 100ns/450ns |
Switching Energy | 9.6mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 8V |
RoHS Status | RoHS Compliant |