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IXSH30N60AU1

IGBT 600V 50A 200W TO247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXSH30N60AU1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 728
  • Description: IGBT 600V 50A 200W TO247 (Kg)

Details

Tags

Parameters
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*30N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 50A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 190 ns
Test Condition 480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 30A
Turn Off Time-Nom (toff) 680 ns
Gate Charge 110nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 60ns/400ns
Switching Energy 2.5mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 3 V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
See Relate Datesheet

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