Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2001 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXS*30N60 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 30 ns |
Power - Max | 200W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 90 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 55A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Turn On Time | 70 ns |
Test Condition | 480V, 30A, 4.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
Turn Off Time-Nom (toff) | 290 ns |
IGBT Type | PT |
Gate Charge | 100nC |
Current - Collector Pulsed (Icm) | 110A |
Td (on/off) @ 25°C | 30ns/90ns |
Switching Energy | 700μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7V |
Fall Time-Max (tf) | 120ns |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |