Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2000 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1kV |
Max Power Dissipation | 300W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 70A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 80 ns |
Transistor Application | POWER CONTROL |
Rise Time | 150ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 400 ns |
Collector Emitter Voltage (VCEO) | 3.5V |
Max Collector Current | 70A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1kV |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Turn On Time | 300 ns |
Test Condition | 800V, 35A, 2.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 35A |
Turn Off Time-Nom (toff) | 1700 ns |
Gate Charge | 180nC |
Current - Collector Pulsed (Icm) | 140A |
Td (on/off) @ 25°C | 80ns/400ns |
Switching Energy | 10mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |