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IXSH35N100A

IGBT 1000V 70A 300W TO247AD


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXSH35N100A
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 801
  • Description: IGBT 1000V 70A 300W TO247AD (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1kV
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 70A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 80 ns
Transistor Application POWER CONTROL
Rise Time 150ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 400 ns
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 70A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 300 ns
Test Condition 800V, 35A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 35A
Turn Off Time-Nom (toff) 1700 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 80ns/400ns
Switching Energy 10mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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