IXSH35N120B
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 300W |
| Base Part Number | IXS*35N120 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 300W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 70A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3.6V |
| Turn On Time | 67 ns |
| Test Condition | 960V, 35A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 580 ns |
| IGBT Type | PT |
| Gate Charge | 120nC |
| Current - Collector Pulsed (Icm) | 140A |
| Td (on/off) @ 25°C | 36ns/160ns |
| Switching Energy | 5mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
