banner_page

IXSH45N100

IGBT 1000V 75A 300W TO247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXSH45N100
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 759
  • Description: IGBT 1000V 75A 300W TO247 (Kg)

Details

Tags

Parameters
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 400 ns
Test Condition 800V, 45A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 45A
Turn Off Time-Nom (toff) 2750 ns
Gate Charge 165nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 80ns/400ns
Switching Energy 15mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.7 V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 1500ns
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 75A
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good