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IXSK35N120BD1

IGBT 1200V 70A 300W TO264


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXSK35N120BD1
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 789
  • Description: IGBT 1200V 70A 300W TO264 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10.000011g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*35N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 300W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.6V
Turn On Time 67 ns
Test Condition 960V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A
Turn Off Time-Nom (toff) 580 ns
IGBT Type PT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 36ns/160ns
Switching Energy 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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