Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Number of Pins | 3 |
Weight | 10.000011g |
Packaging | Tube |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 35 |
Base Part Number | IXS*50N60 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 300W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 75A |
Reverse Recovery Time | 50ns |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 300 ns |
Test Condition | 480V, 50A, 2.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
Turn Off Time-Nom (toff) | 740 ns |
Gate Charge | 190nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 70ns/200ns |
Switching Energy | 6mJ (off) |
Gate-Emitter Voltage-Max | 20V |
VCEsat-Max | 2.7 V |
Gate-Emitter Thr Voltage-Max | 7V |
Fall Time-Max (tf) | 600ns |
RoHS Status | RoHS Compliant |