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IXSK80N60B

IGBT 600V 160A 500W TO264


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXSK80N60B
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 563
  • Description: IGBT 600V 160A 500W TO264 (Kg)

Details

Tags

Parameters
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 160A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 120 ns
Test Condition 480V, 80A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 80A
Turn Off Time-Nom (toff) 450 ns
IGBT Type PT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/140ns
Switching Energy 4.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10.000011g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*80N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 500W
See Relate Datesheet

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