Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247™ |
Number of Pins | 247 |
Weight | 5.3g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2003 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | SHORT CIRCUIT RATED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 170W |
Base Part Number | IXS*40N60 |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | ISOLATED |
Input Type | Standard |
Power - Max | 170W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 70A |
Reverse Recovery Time | 35 ns |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 100 ns |
Test Condition | 480V, 40A, 2.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
Turn Off Time-Nom (toff) | 370 ns |
IGBT Type | PT |
Gate Charge | 190nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 50ns/110ns |
Switching Energy | 1.8mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |