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IXST15N120BD1

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXST15N120BD1
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 310
  • Description: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature FAST SWITCHING, LOW SWITCHING LOSSES
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*15N120
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 150W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 30 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.4V
Turn On Time 55 ns
Test Condition 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Turn Off Time-Nom (toff) 563 ns
IGBT Type PT
Gate Charge 57nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/148ns
Switching Energy 1.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant
See Relate Datesheet

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