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IXST35N120B

Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXST35N120B
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 422
  • Description: Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(2+Tab) TO-268 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*35N120
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.6V
Turn On Time 67 ns
Test Condition 960V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A
Turn Off Time-Nom (toff) 580 ns
IGBT Type PT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 36ns/160ns
Switching Energy 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant
See Relate Datesheet

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