Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 7.300002g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2003 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW SATURATION VOLTAGE |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 500W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXS*80N60 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 500W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 160A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Turn On Time | 120 ns |
Test Condition | 480V, 80A, 2.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 80A |
Turn Off Time-Nom (toff) | 450 ns |
IGBT Type | PT |
Gate Charge | 240nC |
Current - Collector Pulsed (Icm) | 300A |
Td (on/off) @ 25°C | 60ns/140ns |
Switching Energy | 4.2mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 8V |
RoHS Status | RoHS Compliant |