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IXTA3N150HV

POWER MOSFET N-CHANNEL ENHANCEMENT MODE


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXTA3N150HV
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 336
  • Description: POWER MOSFET N-CHANNEL ENHANCEMENT MODE (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 38.6nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 3A
RoHS Status ROHS3 Compliant
See Relate Datesheet

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